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| NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high-voltage TV video and chroma output circuits, high-voltage linear amplifiers, and high-voltage transistor regulators. Features: D High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA D Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V Absolute Maximum Ratings: Collector-Emitter Voltage (IC = 1mA, RBE = 10k, Note 1), VCER . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE IC = 4mA, VCE = 10V IC = 20mA, VCE = 10V IC = 40mA, VCE = 10V Dynamic Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance fT Ccb IC = 20mA, VCE = 10V, f = 20MHz VCB = 20V, IE = 0, f = 1MHz 50 - - - - 3 MHz pF 20 30 20 - - - - 90 - V(BR)CER ICBO IEBO IC = 1mA, IB = 0, Note 1 VCB = 300V, IE = 0 VBE = 5V, IC = 0 300 - - - - - - 10 10 V A A Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .180 (4.57) .132 (3.35) Dia .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
Price & Availability of NTE171
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